THE EFFECT OF MICROVOLUME PARAMETERS OF VLSI CIRCUIT COMPONENTS ON THE ENERGY OUTPUT DUE TO THE IMPACT OF PROTONS
A. V. Afonin, L. A. Grishantseva, V. A. Polunin, A. I. Chumakov
VANT. Ser.: Mat. Mod. Fiz. Proc 2012. Вып.4. С. 70-73.
Reduction of active dimensions of components in integrated circuits leads to a higher sensitivity to local radiation effects caused by nuclear particles. The paper describes efforts on the numerical simulation by GEANT4 code of the energy output processes under the effect of 15 ÷ 1 000 MeV protons in VLSI circuit components with a variety of their shapes and scales in the standard environment. The results obtained for sensitive areas of micron scales demonstrate that the energy output maximum in a microvolume weakly depends on the charge accumulation conditions; account for particles generated outside the sensitive volume provides an almost 3 times increase of the probability of energy output; a maximum value of energy output actually remains unchanged with proton energies above 50 MeV.Keywords: proton radiation, integrated circuit, energy output, charge collection effect, GEANT4 numerical code.
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