METHODOLOGICAL ISSUES OF SIMULATING TRANSIENT PROCESSES IN SEMICONDUCTORS
M. V. Gorbatenko, S. S. D’yakov, D. V. Opasin, B. N. Shamrayev
VANT. Ser.: Mat. Mod. Fiz. Proc 2018. Вып.4. С. 3-18.
The paper considers difference schemes for solving the continuity equations of charge carriers in semiconductors to select a cost-effective scheme for solving multidimensional problems of the radiation effect on semiconductors. A modification to the classic Shockley-Hall-Reed kinetics is described, which provides the charge conservation during recombination. The calculated results are compared with analytical estimates and experimental data on the (p–n)-junction breakdown. Keywords: charge carrier statistics, drift, diffusion, recombination kinetics, (p–n)-junction breakdown.
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English
